HN29W25611T-50H Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN29W25611T-50H

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Hitachi -> Renesas Electronics 

HN29W25611T-50H

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Notes

VCC voltage

VSS voltage

All input and output voltages

VCC

–0.6 to +7

V

1

VSS

0

V

Vin, Vout

–0.6 to +7

V

1, 2

Operating temperature range

Topr

0 to +70

˚C

Storage temperature range

Tstg

–65 to +125

˚C

3

Storage temperature under bias

Tbias

–10 to +80

˚C

Notes: 1. Relative to VSS.

2. Vin, Vout = –2.0 V for pulse width ≤ 20 ns.

3. Device storage temperature range before programming.

Capacitance (Ta = 25˚C, f = 1 MHz)

Parameter

Input capacitance

Output capacitance

Symbol

Cin

Cout

Min Typ Max Unit Test conditions

— — 6 pF Vin = 0 V

— — 12 pF Vout = 0 V

17

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