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XM1002-BD Просмотр технического описания (PDF) - M/A-COM Technology Solutions, Inc.

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XM1002-BD
MA-COM
M/A-COM Technology Solutions, Inc. MA-COM
XM1002-BD Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
XM1002-BD
Image Reject Mixer
34 - 46 GHz
Rev. V1
App Note [1] Biasing - As shown in the bonding diagram, the pHEMT mixer devices are operated using a
separate gate voltage Vg1. Set Vg1=-0.5V for optimum conversion loss performance.
App Note [2] Bias Arrangement - Each DC pad (Vg1) needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] USB/LSB Selection -
LSB
IF2
USB
IF1
For Upper Side Band Operation (USB): With IF1
and IF2 connected to the direct port (0º) and cou-
pled port (90º) respectively as shown in the dia-
gram, the USB signal will reside on the isolated
port. The input port must be loaded with 50 ohms.
For Lower Side Band Operation (LSB): With IF1
and IF2 connected to the direct port (0º) and cou-
pled port (90º) respectively as shown in the dia-
gram, the LSB signal will reside on the input port.
The isolated port must be loaded with 50 ohms.
Note: The coupled port can be used as an alterna-
tive input but the port location of the Coupled and
Direct ports reverse.
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
-90o
IF2
IF1
In Phase Combiner
-90o
IF2
IF1
8
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