XM1001-BD Просмотр технического описания (PDF) - M/A-COM Technology Solutions, Inc.
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XM1001-BD Datasheet PDF : 11 Pages
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XM1001-BD
Image Reject Mixer
12.0-40.0 GHz
Features
Fundamental Image Reject Mixer
8.0 dB Conversion Loss
20.0 dB Image Rejection
+25.0 dBm Input Third Order Intercept (IIP3)
100% On-Wafer RF Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s 12.0-40.0 GHz GaAs MMIC
fundamental image reject mixer can be used as an
up- or down-converter. The device has a conversion
loss of 8.0 dB with a 20.0 dB image rejection across
the band. I and Q mixer outputs are provided and an
external 90 degree hybrid is required to select the
desired sideband. This MMIC uses M/A-COM Tech’s
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder
die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Ordering Information
Part Number
Package
XM1001-BD-000V
“V” - vacuum release
gel paks
XM1001-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
+0.3 VDC
+20.0 dBm
+20.0 dBm
-65 °C to +165 °C
-55 °C to +125 °C
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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