PSB41 Просмотр технического описания (PDF) - Powersem GmbH
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PSB41 Datasheet PDF : 2 Pages
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PSB 41
200
1:TVJ= 150°C
[A]
2:TVJ= 25°C
150
100
50
IF
1
2
0
0.5 1 1.5 2 2.5
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
550
500
4
10
A2s
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
3
TVJ=45°C
10
TVJ=150°C
2
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
PSB
41
175
150
125
100
75
50
25
PVTOT
0
IFAVM 20
80
TC
0.26 0.14 = RTHCA [K/W] 85
0.39
90
95
100
0.64
105
110
115
1.14
120
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.64
40
0
[A]
50
Tamb
125
130
135
140
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
DC
sin.180°
40
rec.120°
rec.60°
rec.30°
30
I2D0
10
0
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
3
K/W
2
Z thJK
Z thJC
1
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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