TN3440A Просмотр технического описания (PDF) - Fairchild Semiconductor
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TN3440A Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1000
- 40 °C
800
600
25 ° C
125 ° C
400
β = 10
200
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
VCB= 225V
100
10
1
0.1
25
50
75
100
125
150
T A- AMBIENT TE MPE RATURE (°C)
Contours of Constant Gain
Bandwidth Product (f T )
10
5
60 MHz
40 MHz
20 MHz
40 MHz
20 MHz
1
1
10
100
IC- COLLECTOR CURRENT (mA)
1000
Base-Emitter ON Voltage vs
Collector Current
10 0 0
800
600
400
200
- 40 °C
25 °C
125 °C
VCE = 5V
0
1
10
10 0
1 00 0
I C - COLLECTOR CURRENT (mA)
Collector-Base / Emitter-Base
Capacitance vs Reverse Bias Voltage
1000
800
600
400
200
C ib, IE = 8
100
80
60
40
Ccb, IE = 0
20
10
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
1
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (o C)
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