UL634H256SC45 Просмотр технического описания (PDF) - Zentrum Mikroelektronik Dresden AG
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UL634H256SC45 Datasheet PDF : 13 Pages
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UL635H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
IOH
IOL
VCC
VOH
VOL
VCC
VIH
VIL
VCC
VOH
VOL
= VCCmin
=-2 mA
= 2 mA
= VCCmin
= 2.4 V
= 0.4 V
= 3.6 V
= 3.6 V
= 0V
= 3.6 V
= 3.6 V
= 0V
C-Type
K-Type
Unit
Min. Max. Min. Max.
2.4
2.4
V
0.4
0.4 V
-2
-2 mA
2
2
mA
1
1 µA
-1
-1
µA
1
1 µA
-1
-1
µA
SRAM Memory Operations
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
2 Address Access Time to Data Validg
tAVAV
tAVQV
3 Chip Enable Access Time to Data Valid tELQV
4 Output Enable Access Time to Data
Valid
tGLQV
5 E HIGH to Output in High-Zh
6 G HIGH to Output in High-Zh
tEHQZ
tGHQZ
7 E LOW to Output in Low-Z
tELQX
8 G LOW to Output in Low-Z
tGLQX
9 Output Hold Time after Address Change
10 Chip Enable to Power Activee
11 Chip Disable to Power Standbyd, e
tAXQX
tELICCH
tEHICCL
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both Low.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
35
Min.
35
Max.
35
35
15
45
Min.
45
Max.
45
45
20
Unit
ns
ns
ns
ns
13
15
ns
13
15
ns
5
5
ns
0
0
ns
3
3
ns
0
0
ns
35
45
ns
4
April 7, 2005
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