BAT54 Просмотр технического описания (PDF) - Diodes Incorporated.

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BAT54

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Diodes Incorporated. 

BAT54 /A /C /S

Marking Information

Shanghai A/T Site

Chengdu A/T Site

xxx = Product Type Marking Code

KL1 = BAT54

KL2 = BAT54A

KL3 = BAT54C

KL4 = BAT54S

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y̅ = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

1998

Code

J

Month

Jan

Code

1

…

2002 2003

…

…

N

P

…

Feb

Mar

Apr

2

3

4

2009

W

May

5

2010

X

Jun

6

2011

Y

Jul

7

2012

Z

2013

A

2014

B

2015

C

2016

D

Aug

Sep

Oct

Nov

8

9

O

N

2017

E

Dec

D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Forward Continuous Current (Note 5)

Repetitive Peak Forward Current

Forward Surge Current

@ t < 1.0s

Symbol

VRRM

VRWM

VR

IF

IFRM

IFSM

Value

30

200

300

600

Unit

V

mA

mA

mA

Thermal Characteristics

Characteristic

Power Dissipation (Note 5)

Typical Thermal Resistance Junction to Ambient Air (Note 5)

Typical Thermal Resistance Junction to Case (Note 8)

Operating and Storage Temperature Range (Note 6)

Symbol

PD

RθJA

RθJC

TJ, TSTG

Value

200

500

180

-65 to +150

Unit

mW

°C/W

°C/W

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Reverse Breakdown Voltage (Note 7)

Forward Voltage

Reverse Leakage Current (Note 7)

Total Capacitance

Reverse Recovery Time

Symbol Min

Typ

Max

Unit

Test Condition

V(BR)R

30





V

IRS = 100µA

240

IF = 0.1mA

320

IF = 1mA

VF





400

mV IF = 10mA

500

800

IF = 30mA

IF = 100mA

IR





2.0

µA VR = 25V

CT





10

pF VR = 1.0V, f = 1.0MHz

trr





5.0

ns

IF = 10mA through IR = 10mA to

IR = 1.0mA, RL = 100Ω

Notes:

5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.

6. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA

7. Short duration test pulse used to minimize self-heating effect.

8. Device mounted on Polymide substrate PC board. FR4 2oz 1*MRP layout.

BAT54 /A /C /S

Document number: DS11005 Rev. 31 - 2

2 of 5

www.diodes.com

October 2013

© Diodes Incorporated

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