C4261 Просмотр технического описания (PDF) - Renesas Electronics

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C4261

Silicon NPN Epitaxial

Renesas Electronics 

2SC4261

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Oscillating output voltage

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

VCE(sat)

hFE

Cob

fT

VOSC

Min

25

—

—

—

—

50

—

1.8

—

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, IE = 0

—

0.3

µA VCB = 15 V, IE = 0

—

10

µA VCE = 15 V, RBE = ∞

—

1.0

µA VEB = 3 V, IC = 0

—

0.3

V IC = 20 mA, IB = 4 mA

—

180

VCE = 5 V, IC = 5 mA

0.7

1.0

pF VCB = 10 V, IE = 0, f = 1MHz

2.4

—

GHz VCE = 5 V, IC = 20 mA

200

—

mV VCC = 5 V, IC = 5 mA,

f = 930 MHz

Rev.3.00 Aug 10, 2005 page 2 of 4

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