IRF140 Просмотр технического описания (PDF) - Intersil
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IRF140 Datasheet PDF : 7 Pages
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IRF140
SourceTo Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD Modified MOSFET
D
ISDM
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
G
MIN TYP MAX UNITS
-
- 28
A
-
- 110 A
Drain to Source Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 28A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs
-
- 2.5
V
70 150 300 ns
0.44 0.9 1.9 µC
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance Curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 190µH, RG = 25Ω, peak IAS = 28A (Figures 15, 16).
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
30
24
18
12
6
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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