ZTX603 Просмотр технического описания (PDF) - Diodes Incorporated.

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ZTX603

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Diodes Incorporated. 

ZTX602

ZTX603

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX602

ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static Forward

hFE

Current Transfer

Ratio

Transition Frequency fT

2K

5K

2K

0.5K

150

100K

2K

5K

2K

0.5K

150

100K

MHz

IC=50mA, VCE=5V

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

IC=100mA, VCE=10V

f=20MHz

Input Capacitance Cibo

90 Typical

pF

Output Capacitance Cobo

15 Typical

pF

Switching Times

ton

0.5 Typical

µs

toff

1.1 Typical

µs

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

VEB=500mV, f=1MHz

VCB=10V, f=1MHz

IC=500mA, VCE=10V

IB1=IB2=0.5mA

1.0 R5 = 200KΩ

R5 = 1MΩ

0.8 R5 = ∞

R5 = 50KΩ

R5 = 10KΩ

0.6

0.4 DC Conditions

0.2

ZTX602

ZTX603

0

1

10

100

200

VCE - Collector-Emitter Voltage (Volts)

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using

the following equation

Tamb (max )

=

Power

(max ) − Power (act)

0.0057

+25° C

Tamb(max)= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a

given VCE and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

3-210

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