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HM62W4100HCJP-10

4M High Speed SRAM (1-Mword × 4-bit)

Hitachi -> Renesas Electronics 

HM62W4100HC Series

4M High Speed SRAM (1-Mword × 4-bit)

ADE-203-1202 (Z)

Preliminary

Rev. 0.0

Sep. 28, 2000

Description

The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing

technology. It is most appropriate for the application which requires high speed and high density memory,

such as cache and buffer memory in system. The HM62W4100HC is packaged in 400-mil 32-pin SOJ for

high density surface mounting.

Features

• Single supply : 3.3 V ± 0.3 V

• Access time : 10 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current : 115 mA (max)

• TTL standby current : 40 mA (max)

• CMOS standby current : 5 mA (max)

: 1 mA (max) (L-version)

• Data retension current : 0.6 mA (max) (L-version)

• Data retension voltage: 2 V (min) (L-version)

• Center VCC and VSS type pinout

Preliminary: The specification of this device are subject to change without notice. Please contact your nearest

Hitachi’s Sales Dept. regarding specification.

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