1MB10-120 Просмотр технического описания (PDF) - Fuji Electric
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1MB10-120 Datasheet PDF : 5 Pages
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1MB10-120, 1MB10D-120
Characteristics
1MB10-120,1MB10D-120
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C
1000
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=125°C
1000
100
100
Gate resistance : RG [ohm]
100
100
Gate resistance : RG [ohm]
Dynamic input characteristics
Tj=25°C
1000
800
Capacitance vs. Collector-Emitter voltage
Tj=25°C
25
20
1000
600
15
100
400
10
10
200
5
0
0
20
0
40
60
80
100
120 140 160
Gate charge : Qg [nC]
1
0
5
10
15
20
25
30
35
Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area
Typical short circuit capability
+VGE=15V, -VGE <= 15V, Tj <= 125°C, RG >= 160 ohm
Vcc=800V, RG=160 ohm, Tj=125°C
400
80
20
300
60
15
200
40
10
5
100
20
0
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
0
0
5
10
15
20
25
Gate voltage : VGE [V]
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