1MB10-120 Просмотр технического описания (PDF) - Fuji Electric
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1MB10-120 Datasheet PDF : 5 Pages
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1MB10-120, 1MB10D-120
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MB10-120 / IGBT
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
Characteristics
Min.
Typ.
–
–
–
–
5.5
–
–
–
–
1200
–
250
–
80
–
–
–
–
–
–
–
–
Max.
1.0
20
8.5
3.5
–
–
–
1.2
0.6
1.5
0.5
1MB10D-120 / IGBT+FWD
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
–
–
–
–
5.5
–
–
–
–
1200
–
250
–
80
–
–
–
–
–
–
–
–
–
–
–
–
Max.
1.0
20
8.5
3.5
–
–
–
1.2
0.6
1.5
0.5
3.0
0.35
Conditions
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=10mA
VGE=15V, IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=600V IC=10A
VGE=±15V
RG=160 ohm
(Half Bridge)
Unit
mA
µA
V
V
pF
µs
Conditions
Unit
VGE=0V, VCE=1200V
mA
VCE=0V, VGE=±20V
µA
VCE=20V, IC=10mA
V
VGE=15V, IC=10A
V
VGE=0V
pF
VCE=10V
f=1MHz
VCC=600V, IC=10A
µs
VGE=±15V
RG=160 ohm
(Half Bridge)
IF=10A, VGE=0V
V
IF=10A, VGE=-10V, di/dt=100A/µs µs
Thermal resistance characteristics
1MB10-120 / IGBT
Item
Symbol
Thermal resistance
Rth(j-c)
1MB10D-120 / IGBT+FWD
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
–
–
Max.
0.92
Conditions
IGBT
Characteristics
Min.
Typ.
–
–
–
–
Max.
0.92
1.47
Conditions
IGBT
FWD
Unit
°C/W
Unit
°C/W
°C/W
Outline drawings, mm
1MB10-120, 1MB10D-120
TO-3P
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