MD56V62160E-10TA Просмотр технического описания (PDF) - LAPIS Semiconductor Co., Ltd.

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MD56V62160E-10TA

4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

LAPIS Semiconductor Co., Ltd. 

FEDD56V62160E-07

MD56V62160E

Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency  2, Burst Length = 4

tCH

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

CLK

tCC

CKE

tCL

High

CS

tHI

RAS

tSI

CAS

tSI

ADDR Ra

tHI

A12.

A13

BS

tHI

tSI

Ca

BS

tSI

ICCD

tSI

Cb Cc

tHI

BS BS BS

A10

Ra

tAC

tHI

tOHZ

DQ

Qa

Db

Qc

tOLZ

tOH

lOWD

tSI

tHI

WE

tSI

UDQM,

LDQM

Row Active

Write Command

Precharge Command

Read Command

Read Command

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