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IRF5NJ3315

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

Infineon Technologies 

IRF5NJ3315

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BVDSS

BVDSS/TJ

RDS(on)

VGS(th)

VGS(th)/TJ

gfs

IDSS

IGSS

QG

QGS

QGD

td(on)

tr

td(off)

tf

Ls +LD

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-

Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Forward Transconductance

Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

Min.

150

–––

–––

2.0

–––

12

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max. Units

––– ––– V

0.18 ––– V/°C

––– 0.08 

––– 4.0 V

- ––– mV/°C

––– ––– S

––– 25

––– 250

µA

––– 100

––– -100

nA

––– 95

––– 11 nC

––– 47

––– 25

––– 60

––– 75

ns

––– 60

4.0 ––– nH

Test Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1.0mA

VGS = 10V, ID2 = 12A 

VDS = VGS, ID = 250µA

VDS = 15V, ID2 = 12A 

VDS = 120V, VGS = 0V

VDS = 120V,VGS = 0V,TJ =125°C

VGS = 20V

VGS = -20V

ID2 = 12A

VDS = 120V

VGS = 10V

VDD = 75V

ID2 = 12A

RG = 5.1

VGS = 10V

Measured from center of Drain

pad to center of Source pad

Ciss

Input Capacitance

––– 1370 –––

VGS = 0V

Coss

Output Capacitance

––– 300 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 160 –––

ƒ = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current (Body Diode) ––– ––– 20

A

ISM

Pulsed Source Current (Body Diode)  ––– ––– 80

VSD

Diode Forward Voltage

––– ––– 1.3

V TJ=25°C, IS = 12A, VGS=0V

trr

Reverse Recovery Time

––– ––– 260 ns TJ=25°C, IF = 12A,VDD ≤ 25V

Qrr

Reverse Recovery Charge

––– ––– 1.7 µC di/dt = 100A/µs 

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance

Symbol

Parameter

Min.

RJC

Junction-to-Case

–––

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

VDD = 50V, starting TJ = 25°C, L = 1.1mH, Peak IL = 12A, VGS = 10V, RG = 25Ω

 ISD  12A, di/dt  120A/µs, VDD  150V, TJ  150°C

 Pulse width  300 µs; Duty Cycle  2%

Typ.

–––

Max.

1.67

Units

°C/W

2

International Rectifier HiRel Products, Inc.

2018-12-20

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