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IDT7188S45DB Просмотр технического описания (PDF) - Integrated Device Technology

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IDT7188S45DB
IDT
Integrated Device Technology IDT
IDT7188S45DB Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IDT7188S/L
CMOS Static RAM 64K (16K x 4-Bit)
Military Temperature Range
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,3,5)
tWC
ADDRESS
CS
tAS
WE
DATAIN
tAW
tCW
t WR
tDW
tDH
DATA VALID
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap (tWP) of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4. During this period, I/O pins are in the output state so that the input signals should not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±200mV from steady state.
,
2989 drw 09
Ordering Information
IDT 7188
Device
Type
X
XX
Power Speed
X
Package
X
Process/
Temperature
Range
B
Military (-55°C to +125°C)
,
Compliant to MIL-STD-883, Class B
D
300 mil Ceramic DIP (D22-1)
25
35
45
55
Speed in nanoseconds
70
85
S
Standard Power
L
Low Power
2989 drw 10
6.472

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