BD678A Просмотр технического описания (PDF) - Inchange Semiconductor
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BD678A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD676A/678A/680A/682
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD676A
-45
BD678A
-60
V(BR)CEO
Collector-emitter
breakdown voltage
IC=-50mA; IB=0
V
BD680A
-80
BD682
-100
VCEsat
Collector-emitter
saturation voltage
BD676A/678A/680A IC=-2A; IB=-40mA
BD682
IC=-1.5A; IB=-30mA
VBE(on)
ICBO
ICEO
IEBO
Emitter-base
voltage
Collector
cut-off current
Collector
cut-off current
BD676A/678A/680A IC=-2A ; VCE=-3V
BD682
IC=-1.5A ; VCE=-3V
VCB=rated BVCEO; IE=0
Ta=100 ℃
VCE=1/2rated BVCEO; IB=0
Emitter cut-off current
VEB=-5V; IC=0
-2.8
V
-2.5
-2.5
V
-0.2
-2.0
mA
-0.5 mA
-2.0 mA
BD676A/678A/680A IC=-2A ; VCE=-3V
750
hFE
DC current gain
BD682
IC=-1.5A ; VCE=-3V
750
2
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