MC74LVXT8051DT Просмотр технического описания (PDF) - ON Semiconductor
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MC74LVXT8051DT Datasheet PDF : 12 Pages
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MC74LVXT8051
DC CHARACTERISTICS — Digital Section (Voltages Referenced to GND)
Symbol
Parameter
Condition
VCC
Guaranteed Limit
V –55 to 25°C ≤85°C ≤125°C Unit
VIH
Minimum High–Level Input
Voltage, Channel–Select or
Enable Inputs
Ron = Per Spec
3.0
1.2
4.5
2.0
5.5
2.0
1.2
1.2
V
2.0
2.0
2.0
2.0
VIL
Maximum Low–Level Input
Voltage, Channel–Select or
Enable Inputs
Ron = Per Spec
3.0
0.53
0.53 0.53
V
4.5
0.8
0.8
0.8
5.5
0.8
0.8
0.8
Iin
Maximum Input Leakage Current, Vin = VCC or GND
Channel–Select or Enable Inputs
5.5
± 0.1
± 1.0 ± 1.0 µA
ICC
Maximum Quiescent Supply
Channel Select, Enable and
5.5
4
Current (per Package)
VIS = VCC or GND; VIO = 0 V
40
160
µA
DC ELECTRICAL CHARACTERISTICS Analog Section
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Ron Maximum “ON” Resistance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ∆Ron
Maximum Difference in “ON”
Resistance Between Any Two
Channels in the Same Package
Test Conditions
Vin = VIL or VIH
v VIS = VCC to GND
|IS| 10.0 mA (Figures 1, 2)
Vin = VIL or VIH
v VIS = VCC or GND (Endpoints)
|IS| 10.0 mA (Figures 1, 2)
Vin = VIL or VIH
v VIS = 1/2 (VCC – GND)
|IS| 10.0 mA
VCC
V
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
Guaranteed Limit
– 55 to
25_C
v v 85_C
125_C Unit
40
45
50
Ω
30
32
37
25
28
30
30
35
40
25
28
35
20
25
30
15
20
25
Ω
8.0
12
15
8.0
12
15
Ioff Maximum Off–Channel Leakage Vin = VIL or VIH;
5.5
0.1
0.5
1.0
µA
Current, Any One Channel
VIO = VCC or GND;
Switch Off (Figure 3)
Maximum Off–Channel
Leakage Current,
Common Channel
Vin = VIL or VIH;
VIO = VCC or GND;
Switch Off (Figure 4)
5.5
0.2
2.0
4.0
Ion Maximum On–Channel
Leakage Current,
Channel–to–Channel
Vin = VIL or VIH;
Switch–to–Switch =
VCC or GND; (Figure 5)
5.5
0.2
2.0
4.0
µA
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