BT131W-600 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
Список матч
BT131W-600 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Triacs
logic level
Product specification
BT131W series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-sp
Rth j-a
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:14
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
On-state voltage
VGT
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V; IGT = 0.1 A
IT = 2 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dVD/dt
tgt
Critical rate of change of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
MIN. TYP. MAX. UNIT
-
0.4
3 mA
-
1.3
3 mA
-
1.4
3 mA
-
3.8
7 mA
-
1.2
5 mA
-
4.0
8 mA
-
1.0
5 mA
-
2.5
8 mA
-
1.3
5 mA
-
1.2 1.5 V
-
0.7 1.5 V
0.2 0.3
-
V
-
0.1 0.5 mA
MIN.
5
-
TYP. MAX. UNIT
15
- V/µs
2
-
µs
July 1998
2
Rev 1.000
Share Link: 