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BGA427 Просмотр технического описания (PDF) - Infineon Technologies
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Компоненты Описание
Список матч
BGA427
Si-MMIC-Amplifier in SIEGET® 25-Technologie
Infineon Technologies
BGA427 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
BGA427
S-Parameters at
T
A
= 25 °C,
(Testfixture, Appl.1)
f
S
11
S
21
GHz MAG
ANG
MAG
ANG
MAG
S
12
ANG
V
D
= 3V,
Z
o
= 50
Ω
0.1 0.1382 -38.3
0.2 0.1179 -16
0.5 0.1697 -20.8
0.8 0.1824 -56.9
0.9 0.1782 -69.1
1
0.176 -80.6
1.5 0.1827 -133.5
1.8 0.1969 -156.1
1.9 0.2021 -162.8
2
0.2116 -167.7
2.5 0.2437 172.8
3
0.258 153.3
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
0.0022 50.7
0.0046 71.8
0.0104 83.8
0.0169 94.8
0.0194 97.3
0.0225 98.3
0.0385 99.7
0.0479 99.3
0.0517 98.9
0.0549 98.8
0.0709 97.1
0.0892 96.9
S
22
MAG ANG
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
BGA 427-chip
+
V
including parasitics
13
T1
T501
T2
T501
R
1
14.5k
Ω
R
2
R
2
T2
R
3
R
4
R
1
R
3
C’-E’-
Diode
14
C
1
OUT
C
P1
IN
11
C
1
T1
C
P1
C
P2
C
P3
C
P4
C
P5
R
4
C
P2
C
P3
C
P4
280
Ω
2.4k
Ω
170
Ω
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
12
C
P5
0.1pF
GND
EHA07381
C'-E'-diode T1
3
2011-09-15
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