D669 Просмотр технического описания (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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D669

NPN TRANSISTOR

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SD669

2SD669 TRANSISTOR (NPN)

D FEATURES

Power dissipation

T PCM:

1 W (Tamb=25℃)

.,L Collector current

ICM:

1.5 A

Collector-base voltage

O V(BR)CBO: 180 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-126C

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

N Collector-base breakdown voltage

O Collector-emitter breakdown voltage

Emitter-base breakdown voltage

R Collector cut-off current

T Emitter cut-off current

C DC current gain

E Collector-emitter saturation voltage

L Base-emitter voltage

E Transition frequency

J Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

fT

Cob

Test conditions

Ic=1mA, IE=0

Ic=10mA, IB=0

IE=1mA, IC=0

VCB=160V, IE=0

VEB=4V, IC=0

VCE=5V, IC=150mA

VCE=5V, IC=500mA

IC=500mA, IB=50mA

VCE=5V, IC=150mA

VCE=5V, IC=150mA

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

180

V

120

V

5

V

10 µA

10 µA

60

320

30

1

V

1.5 V

140

MHz

14

pF

ECLASSIFICATION OF hFE(1)

WRank

B

C

D

Range

60-120

100-200

160-320

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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