2SB649L-X-T60-R(2005) Просмотр технического описания (PDF) - Unisonic Technologies

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2SB649L-X-T60-R
(Rev.:2005)

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SB649/A

TYPICAL CHARACTERISTICS(Cont.)

Collector Output Capacitance

vs. Collector to Base Voltage

200

f=1MHz

100 IE=0

50

20

10

5

2

-1

-3

-10

-30

-100

Collector to Base Voltage, VCB (V)

PNP SILICON TRANSISTOR

Area of Safe Operation

-3 ICmax

-1.0

-0.3

(-13.3V, -1.5A)

(-40V, -0.5A)

2SB649A

-0.1 DC Operation (TC=25℃)

-0.03

-0.01

-1

(-120V, -0.038A)

(-160V,- 0.02A)

2SB649

-3 -10 -30 -100 -300

Collector to Emitter Voltage, VCE (V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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