2SB649 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB649

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB649

DESCRIPTION

·High Collector Current-IC=-1.5A

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO=-120V(Min)

·Good Linearity of hFE

·Low Saturation Voltage

·Complement to Type 2SD669

APPLICATIONS

·Power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

ICP

Collector Current-Pulse

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

-3

A

20

W

1

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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