2SB649 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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2SB649

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB649

2SB649A

IC=-10mA; RBE=∞

V(BR)CBO

Collector-base

breakdown voltage

2SB649

2SB649A

IC=-1m A ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA

VBE

Base-emitter voltage

IC=-150mA ; VCE=5V

ICBO

Collector cut-off current

VCB=-160V; IE=0

hFE-1

DC current gain

2SB649

2SB649A

IC=-150mA ; VCE=-5V

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

fT

Transition frequency

IC=-150mA ; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V

‹ hFE Classifications

hFE-1

B

C

2SB649

60-120 100-200

2SB649A 60-120 100-200

D

160-320

Product Specification

2SB649 2SB649A

MIN TYP. MAX UNIT

-120

V

-160

-180

V

-180

-5

V

-1.0

V

-1.5

V

-10

μA

60

320

60

200

30

140

MHz

27

pF

2

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