TCET1100(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

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TCET1100
(Rev.:1999)

Optocoupler with Phototransistor Output

Vishay Semiconductors 

TCET110.(G) up to TCET4100

Vishay Telefunken

Absolute Maximum Ratings

Input (Emitter)

Parameter

Reverse voltage

Forward current

Forward surge current

Power dissipation

Junction temperature

Test Conditions

tp ≤ 10 ms

Tamb ≤ 25°C

Symbol

Value

Unit

VR

IF

IFSM

PV

Tj

6

V

60

mA

1.5

A

100

mW

125

°C

Output (Detector)

Parameter

Collector emitter voltage

Emitter collector voltage

Collector current

Collector peak current

Power dissipation

Junction temperature

Test Conditions

tp/T = 0.5, tp ≤ 10 ms

Tamb ≤ 25°C

Symbol

Value

Unit

VCEO

VECO

IC

ICM

PV

Tj

70

V

7

V

50

mA

100

mA

150

mW

125

°C

Coupler

Parameter

Isolation test voltage (RMS)

Total power dissipation

Operating ambient temperature

range

Storage temperature range

Soldering temperature

Test Conditions

t = 1 min

Tamb ≤ 25°C

2 mm from case t ≤ 10 s

Symbol

Value

Unit

VIO

Ptot

Tamb

5

kV

250

mW

–40 to +100 °C

Tstg

–55 to +125 °C

Tsd

260

°C

Document Number 83503

Rev. A6, 08–Sep–99

www.vishay.de • FaxBack +1-408-970-5600

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