L6204 Просмотр технического описания (PDF) - STMicroelectronics

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L6204

DMOS DUAL FULL BRIDGE DRIVER

STMicroelectronics 

L6204

CROSS CONDUCTION

Although the device guarantees the absence of cross-conduction, the presence of the intrinsic diodes in

the POWER DMOS structure causes the generation of current spikes on the sensing terminals.

This is due to charge-discharge phenomena in the capacitors C1 & C2 associated with the drain source

junctions (fig. 1). When the output switches from high to low, a current spike is generated associated with

the capacitor C1. On the low-to-high transition a spike of the same polarity is generated by C2, preceded

by a spike of the opposite polarity due to the charging of the input capacity of the lower POWER DMOS

transistor (see fig. 2).

Figure 1. Intrinsic Structures in the POWER MOS Transistors

Obsolete Product(s) - Obsolete Product(s) Figure 2. Current Typical Spikes on the Sensing Pin

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