BCW65ALT1 Просмотр технического описания (PDF) - Leshan Radio Company

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BCW65ALT1

General Purpose Transistors

Leshan Radio Company 

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

3

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

1

BASE

Value

32

60

5.0

800

2

EMITTER

Unit

Vdc

Vdc

Vdc

mAdc

BCW65ALT1

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

Symbol

PD

RθJA

PD

RθJA

TJ , Tstg

Max

Unit

225

mW

1.8

mW/°C

556

°C/W

300

mW

2.4

mW/°C

417

–55 to +150

°C/W

°C

DEVICE MARKING

BCW65ALT1 = EA

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V (BR)CEO

32

—

(IC = 10mAdc, I B= 0 )

Collector–Emitter Breakdown Voltage

V (BR)CES

60

—

(IC = 10 µAdc, V EB = 0 )

Emitter–Base Breakdown Voltage

(I E= 10 µAdc, I C = 0)

V (BR)EBO

5.0

—

Collector Cutoff Current

I CES

(VCE = 32 Vdc, IE = 0 )

—

—

(VCE = 32 Vdc, IE = 0 , TA = 150°C)

—

—

Emitter Cutoff Current

(V EB= 4.0 Vdc, I C = 0)

I EBO

—

—

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Max

Unit

—

Vdc

—

Vdc

—

Vdc

20

nAdc

20

µAdc

20

nAdc

M11–1/2

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