STTH15R06 Просмотр технического описания (PDF) - STMicroelectronics
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STTH15R06 Datasheet PDF : 9 Pages
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STTH15R06
Characteristics
Figure 7.
Qrr(nC)
800
700
VR=400V
Tj=125°C
600
Reverse recovery charges versus
dIF/dt (90% confidence)
IF=2 x IF(av)
Figure 8. Softness factor versus dIF/dt
(typical values)
S factor
0.35
IF=IF(av)
VR=400V
Tj=125°C
0.30
500
400
300
IF=IF(av)
IF=0.5 x IF(av)
0.25
0.20
200
100
0
0
0.15
dIF/dt(A/µs)
0.10
200
400
600
800
1000
0
dIF/dt(A/µs)
200
400
600
800
1000
Figure 9.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
Relative variation of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (90% confidence)
S factor
IRM
Qrr
50
Tj(°C)
75
IF=IF(av)
VR=400V
Tj=125°C
VFP(V)
12
11
IF=IF(av)
Tj=125°C
10
9
8
7
6
5
4
3
2
Reference: Tj=125°C
1
dIF/dt(A/µs)
100
125
0
0
100
200
300
400
500
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus
(90% confidence)
reverse voltage applied
(typical values)
tfr(ns)
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
100
dIF/dt(A/µs)
200
300
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
C(pF)
1000
100
10
400
500
1
F=1MHz
Vosc =30mV
Tj=25°C
VR(V)
10
100
1000
Doc ID 7974 Rev 2
5/9
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