2SC5051 Просмотр технического описания (PDF) - Renesas Electronics

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2SC5051

Silicon NPN Epitaxial

Renesas Electronics 

2SC5051

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

S21 Parameter

Power gain

Noise figure

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

hFE

Cob

fT

|S21|2

PG

NF

Min

15

—

—

—

50

—

8.0

—

11.5

—

Typ

—

—

—

—

120

0.65

11.0

14.0

14.5

1.1

Max

—

10

1

10

250

1.15

—

—

—

2.0

Unit

V

µA

mA

µA

pF

GHz

dB

dB

dB

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 8 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0, f = 1 MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 1000 MHz

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.3.00 Aug 10, 2005 page 2 of 5

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