HM62W8512B Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W8512B

4 M SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM62W8512B Series

4 M SRAM (512-kword × 8-bit)

ADE-203-904E (Z)

Rev. 4.0

Oct. 20, 1999

Description

The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,

higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The

device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high

density mounting. The HM62W8512B is suitable for battery backup system.

Features

• Single 3.3 V supply: 3.3 V ± 0.3 V

• Access time: 55/70 ns (max)

• Power dissipation

 Active: 16.5 mW/MHz (typ)

 Standby: 3.3 µW (typ)

• Completely static memory. No clock or timing strobe required

• Equal access and cycle times

• Common data input and output: Three state output

• Directly LV-TTL compatible: All inputs and outputs

• Battery backup operation

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