SSD2007 Просмотр технического описания (PDF) - Fairchild Semiconductor
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SSD2007 Datasheet PDF : 5 Pages
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SSD2007A
Dual N-CHANNEL
POWER MOSFET
Electrical Characteristics (TA=25℃ unless otherwise specified)
Symbol
BVDSS
VGS(th)
IGSS
IDSS
IDON
RDS(on)
gfs
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
On-State Drain-Source Current(2)
Static Drain-Source
On-State Resistance(2)
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Min. Typ. Max. Units
Test Condition
600 -- -- V VGS=0V,ID=250μA
2.0 -- 4.0 V VDS= VGS ,ID=250μA
-- -- 1.0 μA VGS=20V
-- -- -1.0 μA VGS=-20V
--
--
--
--
2
25
μA
VDS=50V
VDS=40V,TJ=55℃
8.0 -- -- A VGS=10V,VDS=5V
0.3 Ω VGS=10V,ID=1.5A
0.5
VGS=5.0V,ID=0.6A
-- 2.5 -- S VDS ≥15V,ID=2.0A
-- -- 40
-- -- 70 ns VDD=30V,ID=0.6A,
-- -- 100
Z0=6.0Ω,
-- -- 70
-- -- 15
-- 1.0 --
-- 2.0 --
VDS=25V,VGS=10V,
nC ID=1.3A
Thermal Resistance
Symbol
RθJA
Characteristic
Junction-to-Ambient
Notes ;
(1) TJ= 25℃ to 150℃
(2) Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
Typ.
--
Max.
62.5
Units
℃/W
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
Continuous Source Current --
IS (Body Diode)
--
--
VSD Diode Forward Voltage(2)
--
trr Reverse Recovery Time
--
--
Modified MOSFET Symbol
○D
--
1.8
A
Showing the Integral Reverse
P-N Junction Rectifier
─ ││ ○
││
┘ │─ ─ │ ││ │◀─│▲──
│ G
○S
--
-- 1.2 V TJ=25℃,IS=1.25A,VGS=0V
-- 100 ns TJ=25℃,IF=2.5A,diF/dt=100A/μs
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