KSC5402D(2002) Просмотр технического описания (PDF) - Fairchild Semiconductor

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KSC5402D
(Rev.:2002)

NPN Silicon Transistor Planar Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

3.0

I = 1A

B900mA

2.5

800mA

700mA

600mA

500mA

2.0

400mA

300mA

1.5

200mA

100mA

1.0

0.5

I =0

B

0.0

0

1

2

3

4

5

6

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

100

TJ=125℃

TJ=25℃

10

V = 6V

CE

1

1E-3

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain

10

I =5I

C

B

1

TJ=25℃

TJ=125℃

0.1

1E-3

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 5. Base-Emitter Saturation Voltage

©2002 Fairchild Semiconductor Corporation

100

TJ=25℃

10

TJ=125℃

V = 1V

CE

1

1E-3

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

I =5I

C

B

10

1

0.1

1E-3

TJ=125℃

TJ=25℃

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 4. Collector-Emitter Saturation Voltage

I = 10 I

C

B

10

1

TJ=125℃

TJ=25℃

0.1

1E-3

0.01

0.1

1

IC[A], COLLECTOR CURRENT

Figure 6. Collector-Emitter Saturation Voltage

Rev. B2, December 2002

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