2SD2030 Просмотр технического описания (PDF) - Renesas Electronics
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2SD2030 Datasheet PDF : 8 Pages
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2SD2030, 2SD2031
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SD2030
2SD2031
Unit
160
200
V
160
200
V
5
5
V
100
100
mA
400
400
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit
Collector to base 2SD2030 V(BR)CBO 160 —
—
V
breakdown voltage
2SD2031
200
Collector to emitter 2SD2030 V(BR)CEO 160 —
—
V
breakdown voltage
2SD2031
200
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
Collector cutoff
current
2SD2030 ICBO
—
—
10
µA
2SD2031
DC current transfer ratio
hFE1*1
60
—
hFE2
30
—
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat)
—
—
voltage
200
—
1.5 V
0.5 V
Gain bandwidth product
fT
—
140 —
MHz
Collector output capacitance Cob
—
3.8
—
pF
Note: 1. The 2SD2030 and 2SD2031 are grouped by hFE1 as follows.
Grade
B
C
hFE1
60 to 120 100 to 200
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 140 V, IE = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
VCE = 5 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
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