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74ALVC16836ADGG Просмотр технического описания (PDF) - NXP Semiconductors.

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74ALVC16836ADGG Datasheet PDF : 13 Pages
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Philips Semiconductors
20-bit registered driver with inverted register enable
(3-State)
Product specification
74ALVC16836A
FEATURES
Wide supply voltage range of 1.2 V to 3.6 V
Complies with JEDEC standard no. 8-1A.
CMOS low power consumption
Direct interface with TTL levels
Current drive ± 24 mA at 3.0 V
MULTIBYTETM flow-through standard pin-out architecture
Low inductance multiple VCC and GND pins for minimum noise
and ground bounce
Output drive capability 50 transmission lines @ 85°C
Input diodes to accommodate strong drivers
DESCRIPTION
The 74ALVC16836A is a 20-bit universal bus driver. Data flow is
controlled by active low output enable (OE), active low latch enable
(LE) and clock inputs (CP).
When LE is LOW, the A to Y data flow is transparent. When LE is
HIGH and CP is held at LOW or HIGH, the data is latched; on the
LOW to HIGH transient of CP the A-data is stored in the
latch/flip-flop.
When OE is LOW the outputs are active. When OE is HIGH, the
outputs go to the high impedance OFF-state. Operation of the OE
input does not affect the state of the latch/flip-flop.
To ensure the high-impedance state during power up or power
down, OE should be tied to VCC through a pullup resistor; the
minimum value of the resistor is determined by the current-sinking
capability of the driver.
PIN CONFIGURATION
OE 1
Y1 2
Y2 3
GND 4
Y3 5
Y4 6
VCC 7
Y5 8
Y6 9
Y7 10
GND 11
Y8 12
Y9 13
Y10 14
Y11 15
Y12 16
Y13 17
GND 18
Y14 19
Y15 20
Y16 21
VCC 22
Y17 23
Y18 24
GND 25
Y19 26
Y20 27
NC 28
56 CP
55 A1
54 A2
53 GND
52 A3
51 A4
50 VCC
49 A5
48 A6
47 A7
46 GND
45 A8
44 A9
43 A10
42 A11
41 A12
40 A13
39 GND
38 A14
37 A15
36 A16
35 VCC
34 A17
33 A18
32 GND
31 A19
30 A20
29 LE
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25°C; tr = tf 2.5 ns
SYMBOL
PARAMETER
CONDITIONS
SH00197
TYPICAL
Propagation delay
tPHL/tPLH
An to Yn;
LE to Yn;
VCC = 3.3 V, CL = 50 pF
2.3
2.6
CP to Yn
2.5
fmax
Maximum clock frequency
VCC = 3.3 V, CL = 50 pF
350
CI
Input capacitance
4.0
CI/O
Input/Output capacitance
8.0
CPD
Power dissipation capacitance per buffer
VI = GND to VCC1
transparent mode
Output enabled
13
Output disabled
3
Clocked mode
Output enabled
22
Output disabled
15
NOTES:
1. CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi + S (CL × VCC2 × fo) where: fi = input frequency in MHz; CL = output load capacitance in pF;
fo = output frequency in MHz; VCC = supply voltage in V; S (CL × VCC2 × fo) = sum of outputs.
UNIT
ns
MHz
pF
pF
pF
2000 Mar 14
2
853–2194 23314

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