2N2905A(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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2N2905A Datasheet PDF : 3 Pages
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PNP 2N2905 – 2N2905A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector Cutoff Current
VCB=-50 V
IE=0
VCB=-50 V, IE=0
Tj=150°C
2N2905A -
2N2905
-
2N2905A -
2N2905
-
-
-
-10
-20
nA
-
-
-10
-20
µA
ICEX
Collector Cutoff Current
VCE=-30 V
VBE=0.5V
2N2905A
2N2905
-
- -50 nA
VCEO
Collector Emitter
Breakdown Voltage
IC=-10 mA
IB=0
2N2905A -60 -
2N2905 -40 -
-
-
V
VCBO
Collector Base
Breakdown Voltage
IC=-10 µA
IE=0
2N2905A
2N2905
-60
-
-
V
VEBO
Emitter Base Breakdown IE=-10 µA
Voltage
IC=0
2N2905A
2N2905
-5
-
-
V
IC=-0.1 mA
VCE=-10 V
IC=-1 mA
VCE=-10 V
hFE
DC Current Gain (*)
IC=-10 mA
VCE=-10 V
2N2905A 75 -
-
2N2905 35 -
-
2N2905A 100 -
-
2N2905 50 -
-
2N2905A 100 -
2N2905 75 -
-
-
-
IC=-150 mA
VCE=-10 V
2N2905A 100 - 300
2N2905 40 - 120
IC=-500 mA
VCE=-10 V
2N2905A 50 -
-
2N2905 30 -
-
VCE(SAT)
VBE(SAT)
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
IC=-150 mA
IB=-15 mA
IC=-500 mA
IB=-50 mA
IC=-150 mA
IB=-15 mA
IC=-500 mA
IB=-50 mA
2N2905A
2N2905
-
2N2905A
2N2905
-
2N2905A
2N2905
-
2N2905A
2N2905
-
- -0.4
- -1.6
V
- -1.3
- -2.6
IC =-50 mA
2N2905A
fT
Transition frequency
VCE =-20 V
200 -
- MHz
f = 100MHz
2N2905
td
tr
CCBO
Delay time
Rise time
Collector-Base
capacitance
IC=-150 mA ,IB =-15 mA
-
-VCC=-30 V
-
IE= Ie = 0 ,VCB=-10 V 2N2905A
f = 100kHz
2N2905
-
-
-
10
40
ns
-
8 pF
CEBO
Emitter-Base capacitance
IC= Ic = 0 ,VEB=-2 V
f = 100kHz
2N2905A
2N2905
-
- 30 pF
(*) Pulse conditions : tp < 300 µs, δ =2%
16/10/2012
COMSET SEMICONDUCTORS
2/3
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