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2SB859 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание
Список матч
2SB859
Renesas
Renesas Electronics Renesas
2SB859 Datasheet PDF : 6 Pages
1 2 3 4 5 6
2SB859
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1135
Outline
TO-220AB
ADE-208-860 (Z)
1st. Edition
September 2000
1
23
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Rating
Unit
–100
V
–80
V
–5
V
–4
A
–8
A
40
W
150
°C
–45 to +150
°C

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