2SB859 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB859

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB859

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –80 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1* 1

60

—

hFE2

35

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

20

Collector output capacitance Cob

—

75

Notes: 1. The 2SB859 is grouped by hFE1 as follows.

2. Pulse test

Max

—

Unit

V

Test conditions

IC = –50 mA, RBE = ∞

—

V

IE = –10 µA, IC = 0

–0.1 mA

200

—

–1.5 V

–2

V

VCB = –80 V, IE = 0

VCE = –5 V, IC = –1 A*2

VCE = –5 V, IC = –0.1 A*2

VCE = –5 V, IC = –1 A*2

IC = –2 A, IB = –0.2 A*2

—

MHz VCE = –5 V, IC = –0.5 A*2

—

pF

VCB = –20 V, IE = 0, f = 1 MHz

B

60 to 120

C

100 to 200

2

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