IRF150 Просмотр технического описания (PDF) - Inchange Semiconductor
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IRF150 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS=0
VSD
Diode Forward Voltage
IS=40A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
RGS=50Ω;
ID=20A;
VDD=75V;
RL=50Ω
isc Product Specification
IRF150
MIN TYPE MAX UNIT
100
V
2.0
4.0
V
0.055 Ω
±100 nA
250
uA
2.5
V
3000
500
pF
1500
450
75
ns
200
300
isc website：www.iscsemi.cn
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