Diode Semiconductor Korea
SMS120---SMS1A0
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 100 V
CURRENT: 1.0 A
FEATURES
◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
◇ For surface mounted applications
◇ Low profile package
◇ Built-in strain relief
◇ Metal silicon junction, majority carrier conduction
◇ High surge capability
◇ High current capability,low forward voltage drop
◇ Low power loss,high effciency
◇ For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
◇ High temperature soldering guaranteed:250oC/10 1
11 seconds at terminals
MECHANICAL DATA
◇ Case:JEDEC DO-213AB,molded plastic over
1111passivated chip
◇ Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.0046 ounces, 0.116 gram
DO - 213AB
SOLDERABLE ENDS
D2
0.5± 0.1
4.9± 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
D2=D1
+0
-0.20
0.5± 0.1
Dimensions in millimeters
SMS120 SMS130 SMS140 SMS160 SMS190 SMS1A0 UNITS
Maximum recurrent peak reverse voltage
VRRM
20
30
40
60
90
100
V
Maximum RMS voltage
VRWS
14
21
28
42
63
70
V
Maximum DC blocking voltage
VDC
20
30
40
60
90
100
V
Maximum average forw ord rectified current at
c TL(SEE FIG.1) (NOTE 2)
I(AV)
1.0
A
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC IFSM
30
A
c Method)
Maximum instantaneous forw ard voltage at
v 1.0A(NOTE.1)
VF
0.5
0.7
0.79
V
Maximum DC reverse current @TA=25oC
IR
at rated DC blocking voltage(NOTE1) @T A=100oC
Typical thermal resitance (NOTE2)
RθJA
RθJL
Operating junction and storagetemperature range TSTG
Storage temperature range
TJ
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
0.5
5.0
45
15
-55--- +150
-55--- +150
mA
K/W
oC
oC
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