BAT54H Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.

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BAT54H

Schottky Barrier Diode

Silikron Semiconductor Co.,LTD. 

Production specification

Schottky Barrier Diode

BAT54H

Parameter

Reverse Breakdown Voltage

Forward voltage

Reverse leakage current

Reverse recovery time

Total capacitance

Symbol

V(BR)R

VF1

VF2

VF3

VF4

VF5

IR

trr

CT

Conditions

IR=10μA

IF=0.1mA

IF=1.0mA

IF=10mA

IF=30mA

IF=100mA

VR=25V

IF=10mA,IR=1.0mA

VR=1.0V,f=1.0MHz

Min.

30

Typ.

0.22

0.29

0.35

0.41

0.52

0.5

7.6

Max. Unit

V

0.24 V

0.32 V

0.40 V

0.5

V

0.8

V

2.0

μA

5.0

ns

10

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Silikron Semiconductor CO.,LTD.

2

http://www.silikron.com

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