1N5711W Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

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1N5711W

Surface Mount Schottky Barrier Diode

Shenzhen Luguang Electronic Technology Co., Ltd 

1N5711W

Surface Mount Schottky Barrier Diode

RATINGS AND CHARACTERISTIC CURVES (1N5711W)

FIG.1- TYPICAL FORWARD CHARACTERISTIC

VARIATIONS FOR PRIMARY CONDUCTION

mA

10

5

2

1

5

2

0.1

5

2

0.01

0

0.5

1V

VF, INSTANTANEOUS FWD VOLTAGE (V)

FIG.2- TYP. JUNCTION CAPACITANCE VS

REVERSE VOLTAGE

pF

2

Tj =25OC

1

0

0 10 20 30 40 50V

VR, REVERSE VOLTAGE (V)

FIG.3- TYPICAL REVERSE CHARACTERISTICS

A

100

5

125OC

2

10

5

75OC

2

1

5

2

0.1

25OC

5

2

0.01

0

10 20 30 40 50V

VR, REVERSE VOLTAGE (V)

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