BD900 Просмотр технического описания (PDF) - Comset Semiconductors

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BD900

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD896 – BD898 – BD900 – BD902

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

ICBO

ICEO

IEBO

VCEO

VCE(SAT)

Collector Cutoff

Current

Collector Cutoff

Current

Emitter Cutoff

Current

Collector-Emitter

Breakdown Voltage

(*)

Collector-Emitter

saturation Voltage (*)

IE= 0

VCB = -45 V

IE= 0

VCB = -60 V

IE= 0

TC=25°C

VCB = -80 V

IE= 0

VCB = -100 V

IE= 0

VCB = -45 V

IE= 0

VCB = -60 V TC=100°

IE= 0

C

VCB = -80 V

IE= 0

VCB = -100 V

IE= 0, VCE = - 30 V

IE= 0, VCE = - 30 V

IE= 0, VCE = - 40 V

IE= 0, VCE = - 50 V

VEB= -5 V, IC= 0

IC= -100 mA, IB= 0

IC= -3 A, IB= -12 mA

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

BD896

BD898

BD900

BD902

Min Typ Max Unit

-

- -0.2 mA

-

-

-2 mA

-

- -0.5 mA

-

-

-2 mA

-45 -

-60 -

-80 -

-100 -

-

-

-

V

-

-

- -2.5 V

25/09/2012

COMSET SEMICONDUCTORS

2|4

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