BFP181 Просмотр технического описания (PDF) - Infineon Technologies

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BFP181

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFP181

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 5 mA, VCE = 8 V, pulse measured

V(BR)CEO 12

-

-V

ICES

-

- 100 µA

ICBO

-

- 100 nA

IEBO

-

-

1 µA

hFE

70 100 140 -

2

2013-10-15

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