BCW69LT1 Просмотр технического описания (PDF) - ON Semiconductor

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BCW69LT1

General Purpose Transistors

ON Semiconductor 

BCW69LT1

TYPICAL STATIC CHARACTERISTICS

1.0

TA = 25°C

0.8

0.6

IC = 1.0 mA 10 mA

50 mA 100 mA

0.4

0.2

0

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0

IB, BASE CURRENT (mA)

5.0 10 20

Figure 6. Collector Saturation Region

100

TA = 25°C

PULSE WIDTH = 300 μs

80 DUTY CYCLE ≤ 2.0%

300 μA

60

40

20

350 μA

IB = 400 μA

250 μA

200 μA

150 μA

100 μA

50 μA

0

0 5.0 10 15 20 25 30 35 40

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Characteristics

1.4

TJ = 25°C

1.2

1.0

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 1.0 V

0.4

0.2

VCE(sat) @ IC/IB = 10

0

0.1 0.2

0.5 1.0 2.0

5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltages

50 100

1.6

*APPLIES for IC/IB ≤ hFE/2

0.8

*qVC for VCE(sat)

0

25°C to 125°C

− 55°C to 25°C

0.8

1.6

qVB for VBE

25°C to 125°C

− 55°C to 25°C

2.4

0.1

0.2 0.5 1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

50 100

Figure 9. Temperature Coefficients

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