TIP127 Просмотр технического описания (PDF) - Comset Semiconductors
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TIP127 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
PNP TIP125-126-127
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for use in power linear and switching applications.
NPN complements are TIP120-121-122
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
IB
Base Current
@ Tc < 25°
PT
Power Dissipation
@ Ta < 25°
TJ
Junction Temperature
Ts
Storage Temperature range
Value
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
-60
-80
-100
-60
-80
-100
-5
-5
-8
-120
65
2
150
-65 to +150
Unit
V
V
V
A
A
mA
W
°C
08/10/2012
COMSET SEMICONDUCTORS
1|3
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