2SA1960 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SA1960

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

Collector Output Capacitance vs.

Collector to Base Voltage

10

IE =0

f = 1 MHz

5

2SA1960

Emitter Input Capacitance vs.

Emitter to Base Voltage

20

IC =0

f = 1 MHz

10

5

2

1

–0.5 –1 –2

–5 –10 –20 –50

Collector to Base Voltage VCB (V)

2

–0.5

–1

–2

–5

Emitter to Base Voltage VEB (V)

Gain Bandwidth Product vs.

Collector Current

1.5

VCE = –10 V

1.0

0.5

0

–1 –2 –5 –10 –20 –50 –100 –200

Collector Current I C (mA)

5

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