IL215AT Просмотр технического описания (PDF) - Siemens AG
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IL215AT Datasheet PDF : 3 Pages
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Figure 9. Normalized non-saturated and saturated
collector-emitter current versus LED current
100
Normalized to:
Ta = 25°C
10 Vce = 5 V
IF = 1 mA
Vce = 5 V
Vce = .4 V
1
.1
.01
.1
1
10
100
IF - LED Current - mA
Figure 11. Collector-base photocurrent versus
LED current
1000
100
Ta = 25°C
Vcb = 9.3 V
10
1
.1
.01
.1
1
10 100
IF - LED Current - mA
1000
Figure 13. Low to high propagation delay
versus LED current and load resistor
80
10KΩ
60
40 4.7KΩ
20 2KΩ
0
0
Ta = 25°C, Vcc = 5 V, Vth = 1.5 V
5
10
15
20
IF - LED Current - mA
Figure 15. Typical switching characteristics
versus base resistance (saturated operation)
100
Input:
50
IF =10mA
Pulse width=100 mS
Duty cycle=50%
T OFF
10
5
TON
1.0
10K
50K 100K 500K 1M
Base-emitter resistance, RBE (Ω)
Semiconductor Group
Figure 10. Normalized collector-base pho-
tocurrent versus LED current
100
Normalized to:
Ta = 25°C
10 Vce = 5 V
IF = 1 mA
1
.1
.01
.01
.1
1
10 100 1000
IF - LED Current - mA
Figure 12. High to low propagation delay versus
LED current and load resistor
20
10KΩ
Ta = 25°C
Vcc = 5 V
15
4.7KΩ Vth = 1.5 V
10 2KΩ
5
0
0
5
10
15
20
IF - LED Current - mA
Figure 14. Normalized non-saturated HFE
versus base current and temperature
1.2
70°C
Normalized to:
50°C
Ib = 20µA
1.0
25°C
Vce = 10 V
Ta = 25°C
0.8
-20°C
0.6
0.4
1
10
100
Ib - Base Current - µA
1000
Figure 16. Typical switching times
versus load resistance
1000
Input:
500 IF=10 mA
Pulse width=100 mS
Duty cycle=50%
100
T OFF
50
10
5
TON
1
0.1 0.5 1
5 10 50 100
Load resistance RL (KΩ)
4–9
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