B903 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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B903

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

DESCRIPTION

·With TO-220 package

·Low collector saturation voltage

·Large current capacity.

·Complement to type 2SD1212

APPLICATIONS

·Suitable for relay drivers, high-speed

inverters,converters, and other genral

large current switching applications.

·High-speed switching applications

PINNING

PIN

1

2

3

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Product Specification

2SB903

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

Open emitter

VCEO

Collector-emitter voltage

Open base

VEBO

Emitter-base voltage

Open collector

IC

Collector current

ICM

Collector current-peak

PC

Collector power dissipation

TC=25℃

Tj

Junction temperature

Tstg

Storage temperature

VALUE

-60

-30

-6

-12

-20

1.75

35

150

-55~150

UNIT

V

V

V

A

A

W

℃

℃

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