2SC2619 Просмотр технического описания (PDF) - Renesas Electronics

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2SC2619

Silicon NPN Epitaxial

Renesas Electronics 

2SC2619

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

30

Collector to emitter breakdown voltage V(BR)CEO

30

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

60

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Noise figure

NF

—

Note: 1. The 2SC2619 is grouped by hFE as follows.

Grade

B

C

—

—

V IC = 10 µA, IE = 0

—

—

V IC = 1 mA, RBE = ∞

—

—

V IE = 10 µA, IC = 0

—

0.5

µA VCB = 20 V, IC = 0

—

0.5

µA VEB = 2 V, IC = 0

—

200

VCE = 12 V, IC = 2 mA

—

1.1

V IC = 10 mA, IB = 1 mA

—

0.75

V VCE = 12 V, IC = 2 mA

230

—

MHz VCE = 12 V, IC = 2 mA

—

3.5

pF VCB = 10 V, IE = 0, f = 1 MHz

5.0

—

dB VCE = 6 V, IC = 2 mA,

f = 1 MHz, Rg = 500 Ω

Mark

FB

FC

hFE

60 to 120 100 to 200

Rev.2.00 Aug 10, 2005 page 2 of 8

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