2SC2619 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2619

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC2619

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

30

V

30

V

5

V

100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 30

—

voltage

Collector to emitter breakdown V(BR)CEO 30

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

35

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Gain bandwidth product

fT

—

230

Collector output capacitance Cob

—

—

Noise figure

NF

—

5.0

Note: 1. The 2SC2619 is grouped by hFE as follows.

Grade

A

B

C

Mark

FA

FB

FC

hFE

35 to 75

60 to 120 100 to 200

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

0.5 µA

0.5 µA

200

1.1 V

VCB = 20 V, IC = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

0.75

—

3.5

—

V

MHz

pF

dB

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 2 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCE = 6 V, IC = 2 mA,

f = 1 MHz, Rg = 500 Ω

See characteristic curves of 2SC460.

2

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